Networking
100 Gbps PAM4 DFB Laser Diode Chips
Use these 13XX nm laser diode chips in high-speed uncooled transceivers based on NRZ or PAM4 (four-level) modulation, available at all four O-band CWDM wavelengths.
These compact chips are very easy to integrate into pluggable transceivers thanks to their wide operating temperature range – from 0 to +85°C – and their top anode and backside cathode configuration. They feature high reliability and are fully RoHS compliant.
By providing your information and clicking ‘Subscribe’, you opt-in to receiving periodic email marketing communications from Coherent Corp. and understand that your personal data will be processed in accordance with our Privacy Policy and that our Terms apply. You may opt-out of marketing emails sent by us at any time by clicking the unsubscribe link in any marketing email you receive.
CWDM DFB Laser Diode Chips
Use these chips in Gigabit Ethernet and storage area networks and 5G wireless front-haul datalinks. They are designed to GR-468 for use in non-hermetic packages.
Key Features
Ideal for uncooled 100 Gbps PAM 4
Designed to GR-468 for use in non-hermetic packages
Top anode and backside cathode configuration
RoHS compliant
Available wavelengths - CWDM4 1270 nm to 1330 nm
Related Products
Featured Blog
The Promise – and Challenge – of Hydrogen Fuel Cells
Coherent FL-ARM lasers enable cost-effective welding of bipolar plates, a key component of PEM fuel cells.
Featured Success Story
Laser Framework Makes a Mark in Siemens’ Digital Factory
Coherent applications development support and Coherent Laser FrameWork software enable Siemens to successfully implement their ID Link manufacturing program.
